au.\*:("HEUKEN, M")
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Recent advances in MOCVD process technology for the growth of compound semiconductor devicesSCHINELLER, B; HEUKEN, M.Applied physics. A, Materials science & processing (Print). 2007, Vol 87, Num 3, pp 479-483, issn 0947-8396, 5 p.Article
Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodesHEUKEN, M; HÖPKEN, L; OPITZ, B et al.Solid-state electronics. 1993, Vol 36, Num 5, pp 761-766, issn 0038-1101Article
Vapor pressures of Y, Ba, Cu precursors for the growth of YBa2Cu3O7 by MOVPEWAFFENSCHMIDT, E; MUSOLF, J; HEUKEN, M et al.Journal of superconductivity. 1992, Vol 5, Num 2, pp 119-125, issn 0896-1107Article
Characterization of Zn(1-y)MgySxSe(1-x) epilayers grown by low-pressure metalorganic vapour phase epitaxyHAMADEH, H; SÖLLNER, J; SCHMORANZER, J et al.Journal of crystal growth. 1996, Vol 158, Num 1-2, pp 89-96, issn 0022-0248Article
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substratesREUTERS, B; STRATE, J; HAHN, H et al.Journal of crystal growth. 2014, Vol 391, pp 33-40, issn 0022-0248, 8 p.Article
AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templatesWITTE, W; REUTERS, B; VESCAN, A et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085006.1-085006.6Article
MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layersTUNA, Ö; HAHN, H; KALISCH, H et al.Journal of crystal growth. 2013, Vol 370, pp 2-6, issn 0022-0248, 5 p.Conference Paper
RF performance of InAlN/AlN/GaN HEMTs on sapphire substrateLECOURT, F; KETTENISS, N; BEHMENBURG, H et al.Electronics letters. 2011, Vol 47, Num 3, pp 212-214, issn 0013-5194, 3 p.Article
Reactor dependent starting transients of doping profiles in MOVPE grown GaNKÖHLER, K; GUTT, R; MÜLLER, S et al.Journal of crystal growth. 2011, Vol 321, Num 1, pp 15-18, issn 0022-0248, 4 p.Article
Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substratesMAUDER, C; WANG, K. R; WOITOK, J. F et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 7, pp 1750-1752, issn 0370-1972, 3 p.Conference Paper
The structure of InAlN/GaN heterostructures for high electron mobility transistorsVILALTA-CLEMENTE, A; POISSON, M. A; BEHMENBURG, H et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 5, pp 1105-1108, issn 1862-6300, 4 p.Conference Paper
MOVPE growth of InN buffer layers on sapphireBRIOT, O; RUFFENACH, S; MORET, M et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2787-2790, issn 0022-0248, 4 p.Conference Paper
High efficiency integral III-N/II-VI blue-green laser converterSOROKIN, S. V; SEDOVA, I. V; HEUKEN, M et al.Electronics Letters. 2007, Vol 43, Num 3, pp 162-163, issn 0013-5194, 2 p.Article
Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactorsDAUELSBERG, M; MARTIN, C; PROTZMANN, H et al.Journal of crystal growth. 2007, Vol 298, pp 418-424, issn 0022-0248, 7 p.Conference Paper
Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®MARTIN, C; DAUELSBERG, M; PROTZMANN, H et al.Journal of crystal growth. 2007, Vol 303, Num 1, pp 318-322, issn 0022-0248, 5 p.Conference Paper
Nonlinear dynamics of vicinal surfacesPIERRE-LOUIS, O; DANKER, G; CHANG, J et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 56-64, issn 0022-0248, 9 p.Conference Paper
Local order in interfacesVAN DER EERDEN, J. P. J. M; MAKKINJE, J; VLUGT, T. J. H et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 83-90, issn 0022-0248, 8 p.Conference Paper
Growth and some electrical properties of lead-free piezoelectric crystals (Na1/2Bi1/2)TiO3 and (Na1/2Bi1/2)TiO3-BaTiO3 prepared by a Bridgman methodGUISHENG XU; ZIQING DUAN; XIAOFENG WANG et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 113-119, issn 0022-0248, 7 p.Conference Paper
In situ observation for semiconductor solution growth using a near-infrared microscopeINATOMI, Y; KIKUCHI, M; NAKAMURA, R et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 193-200, issn 0022-0248, 8 p.Conference Paper
Functionalizing surfaces with arrays of clusters : role of the defectsMELINON, P; HANNOUR, A; PREVEL, B et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 317-324, issn 0022-0248, 8 p.Conference Paper
Steps in solution growth : dynamics of kinks, bunching and turbulenceCHERNOV, A. A; RASHKOVICH, L. N; VEKILOV, P. G et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 1-18, issn 0022-0248, 18 p.Conference Paper
In situ monitored MOVPE growth of undoped and p-doped GaSb(1 0 0)KOLLONITSCH, Z; MÖLLER, K; SCHIMPER, H.-J et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 289-293, issn 0022-0248, 5 p.Conference Paper
MOVPE growth of ZnO using various oxygen precursorsKIRCHNER, C; GRUBER, Th; REUSS, F et al.Journal of crystal growth. 2003, Vol 248, pp 20-24, issn 0022-0248, 5 p.Conference Paper
Modulated growth of thick GaN with hydride vapor phase epitaxyZHANG, W; RIEMANN, T; ALVES, H. R et al.Journal of crystal growth. 2002, Vol 234, Num 4, pp 616-622, issn 0022-0248Article
Hall effect data analysis of GaN n+n structuresARNAUDOV, B; PASKOVA, T; EVTIMOVA, S et al.Physica status solidi. B. Basic research. 2002, Vol 234, Num 3, pp 872-876, issn 0370-1972, 5 p.Conference Paper
